SiC MOSFETs in hard-switched half-bridges
Silicon carbide (SiC) MOSFETs are making major inroads into solar inverters. Engineers are keen to achieve high efficiency across the entire load range. SiC MOSFETs' low on-state resistance and low switching losses support those efforts, especially when the focus is on achieving high efficiency at light loads.
The intrinsic body diode is a very rugged component that enables engineers to install SiC MOSFETs in hard-switched, totem-pole configurations that use synchronous rectification to achieve highest efficiency. But latest-generation SiC MOSFETs have their limitations. This webinar zooms in for a closer look at these drawbacks and puts forward solutions to resolve the issues at hand.
- Why SiC MOSFETs are becoming popular in solar inverters?
- Benefits and drawbacks depicted on a case study
- How to overcome the limitations
- Reliability constraints
- Matthias Tauer is Technical Marketing Manager at Vincotech. Matthias joined Vincotech in 2016 after working as a power electronics R&D engineer for 6+ years, developing solar inverters and resonant dc/dc converters and diving deep into fast-switching semiconductor technologies.
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