State of the SiC MOSFET: Device evolution, technology merit, and commercial prospects
The silicon IGBT was an enormous positive disruption to the power electronics community in the 1980s, and it has been the workhorse of the industry ever since. The next revolutionary technology will be the SiC MOSFET.
Today’s state of the SiC MOSFET indicates resolution on major commercial impediments including price, reliability, ruggedness, and diversification of suppliers. In spite of a price premium over Si IGBTs, the SiC MOSFET has already seen success due to cost-offsetting system-level benefits; the market share for this technology will increase sharply over the next few years as materials costs fall. After more than forty years of development effort, at last the SiC MOSFET appears poised for widespread commercial success and a substantial role in the green energy movement.
Authors: Kevin M. Speer, PhD at Littelfuse, Inc. and Sujit Banerjee, PhD at Monolith Semiconductor Inc.
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