CoolSiC™ MOSFET - a step towards an energy-smart world

Are you keen to move towards an energy-smart world? Then our new CoolSiC™ MOSFET technology is exactly what you’re looking for! It enables radically new product designs, offering a series of compelling advantages over traditional Si-based switches.

In this webinar, you will learn more about the features and benefits of CoolSiC™ MOSFET products. CoolSiC™ MOSFETs are ideal for a broad application spectrum ranging from photovoltaic inverters through battery chargers to energy storage solutions.

You can also find out more about our extensive offering around the new devices to ensure fast and easy design-in for our customers.

We will describe the full Infineon offering around the devices itself enabling an easy and fast design in.

Date/Time

  • September 21st, 2017
  • 15:00 CEST/ Berlin time ; 8:00 am CDT/ Chicago time.

Speakers

  • Dr. Peter Friedrichs  achieved a Dipl.-Ing. in microelectronics from the Technical University of Bratislava in 1993, and a PhD degree from  the University of Erlangen in 1997. In 1996 he joined the Corporate Research of the Siemens AG and was involved in the development of power switching devices on SiC. Since July 2004 he was the managing director of SiCED. After the integration of SiCED’s activities into Infineon started to work as Senior Director Silicon Carbide from April 1st, 2011.
     
  • Dr. Fanny Björk  is responsible for product marketing SiC discretes at division Industrial Power & Control. Fanny joined Infineon in 2003  and has previously  held positions in technical marketing and program management for power devices, e.g. silicon super-junction MOSFETs, IGBTs and SiC devices. Fanny holds a PhD degree in solid-state electronics and a M. Sc. degree in electrical engineering from the Royal Institute of Technology in Stockholm, Sweden.
     


 


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